leshan radio company, ltd. general purpose transistors npn silicon these transistors are designed for general purpose amplifier applications. they are housed in the sot?323/sc?70 package which is designed for low power surface mount applications. 2 emitter 3 collector 1 base maximum ratings rating symbol value unit collector?emitter voltage v ceo 40 vdc collector?base voltage v cbo 75 vdc emitter?base voltage v ebo 6.0 vdc collector current ? continuous i c 600 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, p d 150 mw t a = 25c thermal resistance junction to ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lmbt2222awt1g s-lmbt2222awt1g = p1 electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (1) v (br)ceo 40 ? vdc (i c = 10 madc, i b = 0) collector?base breakdown voltage v (br)cbo 75 ? vdc (i c = 10 adc, i e = 0) emitter?base breakdown voltage v (br)ebo 6.0 ? vdc (i e = 10 adc, i c = 0) base cutoff current i bl ? 20 nadc (v ce = 60 vdc, v eb = 3.0 vdc) collector cutoff current i cex ? 10 nadc (v ce = 60 vdc, v eb = 3.0 vdc) 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. 1 3 2 case 419?02, style 3 sot?323 /sc ? 70 s-lmbt2222awt1g compliance with rohs requirements. we declare that the material of product rev.o 1/3 lmbt2222awt1g and control change requirements; aec-q101 qualified and ppap capable. s- prefix for automotive and other applications requiring unique site
leshan radio company, ltd. ;s-lmbt2222awt1g electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (1) dc current gain (1) h fe ?? (i c = 0.1 madc, v ce = 10 vdc) 35 ?? (i c = 1.0 madc, v ce = 10 vdc) 50 ?? (i c = 10 madc, v ce = 10 vdc) 75 ?? (i c = 150 madc, v ce = 10 vdc) 100 ? (i c = 500 madc, v ce = 10 vdc) 40 ?? collector?emitter saturation voltage(1) v ce(sat) vdc (i c = 150 madc, i b = 15 madc) ?? 0.3 (i c = 500 madc, i b = 50 madc) ?? 1.0 base?emitter saturation voltage(1) v be(sat) vdc (i c = 150 madc, i b = 15 madc) 0.6 1.2 (i c = 500 madc, i b = 50 madc) ?? 2.0 small?signal characteristics current?gain ? bandwidth product f t 300 ?? mhz (i c = 20 madc, v ce = 20vdc, f = 100 mhz) output capacitance c obo ?? 8.0 pf (v cb = 10 vdc, i e = 0, f = 1.0 mhz) input capacitance c ibo ?? 30 pf (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) input impedance h ie 0.25 1.25 k ? (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) voltage feedback ratio h re ?? 4.0 x 10 ?4 (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) small?signal current gain h fe 75 375 ? (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) output admittance h oe 25 200 mhos (v ce = 10 vdc, i c = 10 madc, f = 1.0 khz) noise figure nf ?? 4.0 db (v ce = 10 vdc, i c = 100 adc, r s = 1.0 k ?, f = 1.0 khz) switching characteristics delay time (v cc = 3.0 vdc, v be = ? 0.5 vdc t d ?10 rise time i c = 150 madc, i b1 = 15 madc) t r ?25 ns storage time (v cc = 30 vdc, i c = 150 madc t s ? 225 ns fall time i b1 = i b2 = 15 madc) t f ?60 1. pulse test: pulse width < 300 s, duty cycle < 2.0%. ordering information device marking shipping lmbt2222awt1g p1 3000/tape&reel lmbt2222awt3g p1 10000/tape&reel rev.o 2/3 lmbt2222awt1g
sc?70 (sot?323) a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref leshan radio company, ltd. rev.o 3/3 ;s-lmbt2222awt1g lmbt2222awt1g
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